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| (R) STS8NFS30L TM STripFET N - CHANNEL 30V - 0.018 - 8A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET V DSS 30 V SCHOTTKY IF (A V) 3A R DS(on ) <0.022 V RRM 30 V ID 8A V F(M AX) 0.51 V SO-8 DESCRIPTION: This product associates the latest low voltage StripFETTM in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DCDC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM(*) P t ot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C o o Valu e 30 30 20 8 5 32 2.5 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symb ol V RRM I F(RMS) I F (AV) I FSM I RSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average F orward Current Surge Non Repetitive Forward Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage T L=125 o C =0.5 tp= 10 ms Sinusoidal tp=100 s Valu e 30 20 3 75 1 10000 Un it V A A A A V/s (*) Pulse width limited by safe operating area December 1999 1/8 STS8NFS30L THERMAL DATA R thj -amb R thj -amb T s tg Tj (*) Thermal Resistance Junction-ambient MOSFET (*) Thermal Resistance Junction-ambientSCHOT TKY Storage T emperature Range Maximum Junction Temperature (*) mounte d on FR-4 board (ste ady stat e) 50 100 -65 to 150 150 o o C/W C/W o C o C MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 20 V T c = 125 C o ON () Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V V GS = 4.5V Test Con ditions ID = 250 A ID = 4 A ID = 4 A 8 Min. 1 Typ. 1.6 0.018 0.021 Max. 2.5 0.022 0.026 Unit V A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =4 A V GS = 0 Min. Typ. 10 1050 250 85 Max. Unit S pF pF pF 2/8 STS8NFS30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 15 V ID = 4 A R G = 4.7 V GS = 4.5 V (Resistive Load, see fig. 3) V DD = 24 V ID = 8 A V GS = 4.5 V Min. Typ. 22 60 17.5 4 7 23 Max. Unit ns ns nC nC nC SWITCHING OFF Symbo l t d(of f) tf tr (Voff) tf tc Parameter Turn-off Delay T ime Fall T ime Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 15 V ID = 4 A V GS = 4.5 V R G = 4.7 (Resistive Load, see fig. 3) V DD = 24 V ID = 8 A V GS = 4.5 V R G = 4.7 (Induct ive Load, see fig. 5) Min. Typ. 42 10 11 12 25 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 8 A V GS = 0 50 40 1.6 I SD = 8 A di/dt = 100 A/s T j = 150 o C V DD = 20 V (see test circuit, figure 5) Test Con ditions Min. Typ. Max. 8 32 2 Unit A A V ns nC () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS Symbo l I R () V F() Parameter Reversed Leakage Current Forward Voltage drop o Test Con ditions T J= 25 C T J= 125 oC T J= 25 oC o T J= 125 C V R =30V V R=30V I F =3A I F =3A Min. Typ. 0.03 0.38 Max. 0.2 100 0.51 0.46 Unit mA mA V V 3/8 STS8NFS30L Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/8 STS8NFS30L Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STS8NFS30L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS8NFS30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS8NFS30L Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com . |
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